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CnMemory M2N2G64TU8HD5B-AC Datasheet Page 11

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M2N1G64TUH8D4F / M2N2G64TU8HD4B / M2N1G64TUH8D5F / M2N2G64TU8HD5B
M2N1G64TUH8D6F / M2N2G64TU8HD6B
1GB: 128M x 64 / 2GB: 256M x 64
Unbuffered DDR2 SO-DIMM
REV 1.1 11
07/2008
© NANYA TECHNOLOGY CORPORATION
NANYA reserves the right to change products and specifications without notice.
Environmental Requirements
Symbol
Parameter
Rating
Units
T
OPR
Operating Temperature (ambient)
0 to 65
°C
H
OPR
Operating Humidity (relative)
10 to 90
%
T
STG
Storage Temperature
-50 to 100
°C
H
STG
Storage Humidity (without condensation)
5 to 95
%
Barometric pressure (operating & storage) up to 9850ft.
105 to 69
kPa
Note: Stress greater than those listed may cause permanent damage to the device. This is a stress rating only and device functional
operation at or above the conditions indicated is not implied. Exposure to absolute maximum rating conditions for extended periods may
affect reliability
Absolute Maximum DC Ratings
Symbol
Parameter
Rating
Units
V
DD
Voltage on VDD pins relative to Vss
-1.0 to +2.3
V
V
DDQ
Voltage on VDDQ pins relative to Vss
-0.5 to +2.3
V
V
DDL
Voltage on VDDL pins relative to Vss
-0.5 to +2.3
V
V
IN
, V
OUT
Voltage on I/O pins relative to Vss
-0.5 to +2.3
V
T
STG
Storage Temperature (Plastic)
-55 to +100
°C
Note: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is stress
rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Storage temperature is the case surface temperature on the center/top side of the DRAM.
Operating temperature Conditions
Symbol
Parameter
Rating
Units
Note
T
CASE
Operating Temperature (Ambient)
0 to 95
°C
1
Note:
1. Case temperature is measured at top and center side of any DRAMs.
2. t
CASE
> 85°C t
REFI
= 3.9 μs
DC Electrical Characteristics and Operating Conditions
Symbol
Parameter
Min
Max
Units
Notes
VDD
Supply Voltage
1.7
1.9
V
1
VDDL
DLL Supply Voltage
1.7
1.9
V
1
VDDQ
Output Supply Voltage
1.7
1.9
V
1
VSS, VSSQ
Supply Voltage, I/O Supply Voltage
0
0
V
VREF
Input Reference Voltage
0.49VDDQ
0.51VDDQ
V
1, 2
VTT
Termination Voltage
VREF – 0.04
VREF + 0.04
V
3
Note:
1. There is no specific device VDD supply voltage requirement for SSTL_18 compliance. However, VDDQ must be less than or equal to
VDD under all conditions.
2. VREF is expected to be equal to 0.5 V DDQ of the transmitting device, and to track variations in the DC level of the same. Peak-to-peak
noise on VREF may not exceed 2% of the DC value.
3. VTT of transmitting device must track VREF of receiving device.
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